| PART |
Description |
Maker |
| 2005G13 |
22 mm Aluminum Enclosure Gravity Die Cast 2005G13 and 2009G13
|
Altech corporation
|
| 0936014539 |
GWconnect STD - Standard, Single Lever Hood, Die-cast Aluminum, with 2 Pegs
|
Molex Electronics Ltd.
|
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| CAS16D14 |
Transponder RX antenna< SMD Type: CAS Series>
|
SUMIDA[Sumida Corporation]
|
| CAS14D26 |
Transponder RX antenna< SMD Type: CAS Series
Transponder RX antenna SMD Type: CAS Series
|
Sumida Corporation
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5361203C2WG KMM5361203C2W |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
| MT4C4004J |
1 MEG x 4 DRAM 5V, QUAD CAS PARITY, FAST PAGE MODE
|
MICRON[Micron Technology]
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
